rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 1 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) available 5 ,000 watt transient voltage suppressor (tvs) p rotection d evice screening in reference to mil - prf - 19500 available description this transient voltage suppressor se r ies m 5kp 5.0 a C m 5kp 11 0ca provide s a range of standoff voltage options from 5.0 to 110 v in unidirectional, bidirectional, rohs compliant, and snpb solder dipped options. multiple advanced screening levels are available f or enhanced reliability. clamping action is almost instantaneous. as a result, they provide effective protection from esd or eft per iec61000 -4- 2 and iec61000 -4- 4, as well as transients caused by inductive switching and rfi. they also protect from secondary lightni ng effects per 61000 -4- 5 at the class levels specified below. case 5a (do- 204ar) package also available in : p600 package ( commercial plastic axial - leaded ) 5kp5.0 e3 C 5kp250ca e3 do - 13 package ( metal axial - leaded ) lc6.5a C lc170a important: for the latest information, visit our website http://ww w.microsemi.com . features ? available in both unidirectional and bidirectional configurations ? 3 lot norm screening performed on standby current i d ? 100% surge tested devices ? various s creening in reference to mil - prf - 19500. refer to hi r el non - hermetic product portfolio for more details on the screening options (see part nomenclature for all options.) ? high reliability controlled devices with wafer fabrication and assembly lot traceability ? moisture classification is l evel 1 with no dry pack required per ipc/jedec j - std - 020b ? rohs compliant versions are available applications / benefits ? selections for 5.0 to 11 0 volts stand - off voltage (v wm ) ? economical tvs series for thru - hole mounting ? this m5kpxxx series has a significantly reduced body diameter than the 5kpxxx commercial ser ies for a smaller size footprint often required for aviation and other application s ? p ico - to nano - se cond response time ? protection from transients due to inductive switching and rfi ? compliant to iec 61 0 00 -4- 2 a n d iec 61 000 -4- 4 for esd and eft protection respectively ? secondary lightning protection per iec61000 -4- 5 with 4 2 o hms source impedance : class 1, 2, 3, 4: m 5kp5.0 a to m 5kp110ca class 5: m 5kp5.0 a to m 5kp110ca (short distance) class 5: m5 kp5.0 a to m 5kp36ca (long distance) ? secondary lightning protection per iec61000 -4- 5 with 1 2 o hms source impedance : class 1 & 2: m 5kp5.0 a to m 5kp110ca class 3: m 5kp5.0 a to m 5kp78ca class 4: m5 kp5.0 a to m 5kp40ca ? secondary lightning protection per iec61000 -4- 5 with 2 ohms source impedance: class 2: m 5kp5.0 a to m 5kp70ca class 3: m 5kp5.0 a to m 5kp36ca class 4: m 5kp5.0 a to m 5kp18ca m sc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 2 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) maximum ratings @ 25 oc unless otherwise not ed parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 o c thermal resistance, junction to lead @ 0.375 inch ( 9.5 mm) lead length from body r ? jl 20 o c/w thermal resistance, junction to ambient (1) r ? ja 80 o c/w peak pulse power dissipation (2) 10/1000 s p pp 5000 w steady - state power dissipation @ t l = 25 oc 0.375 inch ( 9.5 mm) from body p d 6 1.56 (1) w t clamping (0 volts to v ( br) min , theoretical ) unidirectional bidirectional < 100 < 5 ps ns forward voltage (3) v f 3.5 v solder temperature @ 10 s 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. with impulse repetition rate (duty factor) of 0.01 % or less (also figure 1 and 2 ). 3. at 100 amp peak impulse of 8.3 ms half - sine wave (unidirectional only). mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0 ? terminals: tin - lead or rohs c ompliant a nnealed m atte -t in plating . s olderable per mil - std - 750, method 2026 . ? marking: p art number ? polarity: cathode indicated by band. no cathode band on bidirectional devices . ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? w eight: approximately 1.4 grams ? see p ackage d imensions on last page. part nomenclature m 5k p 5.0 c a (e3) reliability level * m ma mx mxl (* s ee hi r el non - hermetic product portfolio ) 5 kilowatt rating encapsulated plastic package rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant 5 % voltage tolerance polarity c = bi - directional blank = unidirectional stand - off voltage rating (see electrical characteristics table) downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 3 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) symbols & definitions symbol definition v( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power . the impulse power is the maximum - rated value of the product of i pp a nd v c . v ( br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. i d standby current: the current through the device at rated stand - off voltage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak imp ulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. v c clamping voltage: the voltage across the device in a region of low differential resistance duri ng the application of an impulse current (i pp ) for a specified waveform. i (br) breakdown current : the current used for measuring breakdown voltage v (br) . downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 4 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) electrical characteristics @ 25 oc part number (note 2) reverse st and - off voltage v wm (note 1) breakdown voltage v ( br ) @ i ( br ) maximum clamping voltage v c @ i pp maximum standby current i d @ v wm maximum pe ak pulse current i pp (fig. 2) maximum temperature coefficient of v (br) v(br) v v ma v a a mv/ oc m5kp 5.0a m5kp 6.0a 5.0 6.0 6.40 C 7.00 6.67 C 7.37 50 50 9.2 10.3 2000* 5000 543 485 4.0 4.0 m5kp 6.5a m5kp 7.0a 6.5 7.0 7.22 C 7.98 7.78 C 8.60 50 50 11.2 12.0 2000 1000 447 417 4.0 5.0 m5kp 7.5a m5kp 8.0a 7.5 8.0 8.33 C 9.21 8.89 C 9.83 5 5 12.9 13.6 250 150 388 367 6.0 6.0 m5kp 8.5a m5kp 9.0a 8.5 9.0 9.44 C 10.4 10.0 C 11.1 5 5 14.4 15.4 50 20 347 325 7.0 8.0 m5kp 10a m5kp 11a 10 11 11.1 C 12.3 12.2 C 13.5 5 5 17.0 18.2 15 10 294 274 9.0 10 m5kp 12a m5kp 13a 12 13 13.3 C 14.7 14.4 C 15.9 5 5 19.9 21.5 10 10 251 232 11 12 m5kp 14a m5kp 15a 14 15 15.6 C 17.2 16.7 C 18.5 5 5 23.2 24.4 10 10 215 206 13 15 m5kp 16a m5kp 17a 16 17 17.8 C 19.7 18.9 C 2 0.9 5 5 26.0 27.6 10 10 192 181 16 18 m5kp 18a m5kp 20a 18 20 20.0 C 22.1 22.2 C 24.5 5 5 29.2 32.4 10 10 172 154 19 22 m5kp 22a m5kp 24a 22 24 24.4 C 26.9 26.7 C 29.5 5 5 35.5 38.9 10 10 141 128 24 27 m5kp 26a m5kp 28a 26 28 28.9 C 31.9 31.1 C 34.4 5 5 42.1 45.5 10 10 119 110 29 30 m5kp 30a m5kp 33a 30 33 33.3 C 36.8 36.7 C 40.6 5 5 48.4 53.3 10 10 103 94 35 38 m5kp 36a m5kp 40a 36 40 40.0 C 44.2 44.4 C 49.1 5 5 58.1 64.5 10 10 86 78 40 45 m5kp 43a m5kp 45a 43 45 47.8 C 52.8 50.0 C 55.3 5 5 69.4 72 .7 10 10 72 69 49 51 m5kp 48a m5kp 51a 48 51 53.3 C 58.9 56.7 C 62.7 5 5 77.4 82.4 10 10 65 61 55 60 m5kp 54a m5kp 58a 54 58 60.0 C 66.3 64.4 C 71.2 5 5 87.1 93.6 10 10 57 53 64 69 m5kp 60a m5kp 64a 60 64 66.7 C 73.7 71.1 C 78.6 5 5 96.8 103.0 10 10 52 49 70 75 m5kp 70a m5kp 75a 70 75 77.8 C 86.0 83.3 C 92.1 5 5 113 121 10 10 44 41 84 90 m5kp 78a m5kp 85a 78 85 86.7 C 95.8 94.4 C 104.0 5 5 126 137 10 10 40 36 94 102 m5kp 90a m5kp 1 00 a 90 100 100 C 111 111 C 123 5 5 146 162 10 10 34 31 109 122 m5kp 1 10 a 110 122 - 135 5 177 10 28 132 note s: 1. transient v oltage s uppressors are normally selected with reverse s tand -o ff v oltage (v wm ) w hich should be equal to or greater than the dc or continuous peak operating voltage level . 2. for the bidirectional m5 kp5.0ca double the i d m aximum s tandby c urrent to 4000 a . downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 5 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) graphs t d C pulse width ( s ec.) figure 1 peak pulse power rating curve t C time C ms test waveform parameters: tr=10 s, tp=1000 s figure 2 pulse waveform for 10/1000 s exponential surge pulse current in percent of i pp p pp C peak pulse power ( kw) downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 6 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) graphs (continued) v (br) C reverse breakdown voltage (v) figure 3 typical junction capacitance c , capacitance (pf) downloaded from: http:///
rf01010, rev . b ( 9/13/13 ) ?201 3 microsemi corporation page 7 of 7 m 5kp5.0 a C m 5kp 11 0ca ( e3 ) package dimensions dimensions dim inch millimeters min max min max ll 0.750 - 19.05 - bl 0.3 65 0.385 9.27 9.78 bd 0.235 0.255 5.97 6.48 ld 0.0 47 0.05 3 1.194 1.346 downloaded from: http:///
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